- Part Number
BSM180D12P2C101
- Manufacturer
Rohm Semiconductor
- Description
- MOSFET 2N-CH 1200V 180A MODULE
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of BSM180D12P2C101, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSM180D12P2C101
| Packaging | Bulk | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 180A | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 23000pF @ 10V | |
| Power - Max | 1130W | |
| Mounting Type | * | |
| Package / Case | Module | |
| Supplier Device Package | Module | |
| call me | [email protected] | |
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