- Part Number
BSC750N10ND G
- Manufacturer
Infineon Technologies
- Description
- MOSFET 2N-CH 100V 3.2A 8TDSON
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of BSC750N10ND G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSC750N10ND G
| Packaging | Tape & Reel (TR) | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A | |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 12µA | |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 720pF @ 50V | |
| Power - Max | 26W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8 (5.15x6.15) | |
| Other Names | BSC750N10ND G-ND BSC750N10ND GTR BSC750N10NDG BSC750N10NDGATMA1 SP000359610 | |
| call me | [email protected] | |
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