- Part Number
BSC082N10LS G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 100V 100A TDSON-8
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of BSC082N10LS G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSC082N10LS G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Ta), 100A (Tc) | |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 110µA | |
| Gate Charge (Qg) @ Vgs | 104nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 7400pF @ 50V | |
| Power - Max | 156W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PG-TDSON-8 | |
| Other Names | BSC082N10LS G-ND BSC082N10LSG BSC082N10LSGATMA1 SP000379609 | |
| call me | [email protected] | |
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