Part Number

BSC028N06LS3 G

Manufacturer

Description
MOSFET N-CH 60V 100A TDSON-8
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of BSC028N06LS3 G
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs2.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.2V @ 93µA
Gate Charge (Qg) @ Vgs175nC @ 10V
Input Capacitance (Ciss) @ Vds13000pF @ 30V
Power - Max139W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Other NamesBSC028N06LS3 G-ND
BSC028N06LS3 GTR
BSC028N06LS3G
BSC028N06LS3GATMA1
SP000453652
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