- Part Number
BSB056N10NN3 G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 100V 9A WDSON-2
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of BSB056N10NN3 G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 83A (Tc) | |
| Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 74nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 50V | |
| Power - Max | 78W | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-WDSON | |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | |
| Other Names | BSB056N10NN3 G-ND BSB056N10NN3G BSB056N10NN3GXUMA1 SP000604540 | |
| call me | [email protected] | |
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