- Part Number
BSB012N03LX3 G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 30V 180A 2WDSON
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of BSB012N03LX3 G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSB012N03LX3 G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 180A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 169nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 16900pF @ 15V | |
| Power - Max | 2.8W | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-WDSON | |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | |
| Other Names | BSB012N03LX3 G-ND BSB012N03LX3G BSB012N03LX3GXUMA1 SP000597846 | |
| call me | [email protected] | |
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