- Part Number
2SK3798(Q,M)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 900V 4A TO220SIS
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of 2SK3798(Q,M), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of 2SK3798(Q,M)
| Packaging | Bulk | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V | |
| Power - Max | 40W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220SIS | |
| Other Names | 2SK3798(Q) 2SK3798(Q)-ND 2SK3798(QM) | |
| call me | [email protected] | |
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