- Part Number
2SK1930(TE24L,Q)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 1000V 4A TO220SM
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of 2SK1930(TE24L,Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of 2SK1930(TE24L,Q)
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V | |
| Power - Max | 100W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-220SM | |
| call me | [email protected] | |
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