- Part Number
2SK1382(Q)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 100V 60A TO-3PL
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of 2SK1382(Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of 2SK1382(Q)
| Packaging | Bulk | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate, 4V Drive | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) | |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 176nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 7000pF @ 10V | |
| Power - Max | 200W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PL | |
| Supplier Device Package | TO-3P(L) | |
| call me | [email protected] | |
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