- Part Number
2SD2406-Y(F)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- TRANS NPN 80V 4A TO220NIS
- Category
- Discrete Semiconductor Products
- Family
- Transistors (BJT) - Single
- To learn about the specification of 2SD2406-Y(F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of 2SD2406-Y(F)
| Packaging | Tube | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A | |
| Current - Collector Cutoff (Max) | 30µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V | |
| Power - Max | 25W | |
| Frequency - Transition | 8MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220NIS | |
| call me | [email protected] | |
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