Part Number

2N6849U

Manufacturer

Description
MOSFET P-CH 100V 18-LCC
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of 2N6849U
PackagingBulk
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs300 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs34.8nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max800mW
Mounting TypeSurface Mount
Package / Case18-BQFN Exposed Pad
Supplier Device Package18-ULCC (9.14x7.49)
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