2N5550G

To learn about the specification of 2N5550G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2N5550G with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of 2N5550G.
We are offering 2N5550G for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of 2N5550G

Packaging	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	140V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Power - Max	625mW
Frequency - Transition	300MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3
Other Names	2N5550GOS
call me	[email protected]

2N5550G Related Products

ON Semiconductor