1N8035-GA

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Specifications of 1N8035-GA

Packaging	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	14.6A (DC)
Voltage - Forward (Vf) (Max) @ If	1.5V @ 15A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 650V
Capacitance @ Vr, F	1107pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-276AA
Supplier Device Package	TO-276
Operating Temperature - Junction	-55°C ~ 250°C
Other Names	1242-1122 1N8035GA
call me	[email protected]

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