1N8032-GA

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Specifications of 1N8032-GA

Packaging	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	2.5A
Voltage - Forward (Vf) (Max) @ If	1.3V @ 2.5A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 650V
Capacitance @ Vr, F	274pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-257-3
Supplier Device Package	TO-257
Operating Temperature - Junction	-55°C ~ 250°C
Other Names	1242-1119 1N8032GA
call me	[email protected]

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