1N8030-GA

To learn about the specification of 1N8030-GA, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 1N8030-GA with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of 1N8030-GA.
We are offering 1N8030-GA for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of 1N8030-GA

Packaging	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	750mA
Voltage - Forward (Vf) (Max) @ If	1.39V @ 750mA
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 650V
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-257-3
Supplier Device Package	TO-257
Operating Temperature - Junction	-55°C ~ 250°C
Other Names	1242-1117 1N8030GA
call me	[email protected]

1N8030-GA Related Products

GeneSiC Semiconductor