Infineon Technologies AG further strengthens the 1200-V single-tube IGBT portfolio to deliver a new line up to 75 A. The TO-247PLUS package also integrates full rated current anti-parallel diodes. The new TO-247PLUS 3-pin and 4-pin package meets the ever-increasing demands for higher power density and higher efficiency. Typical applications requiring high power density 1200VIGBT include frequency converters, photovoltaic inverters and uninterruptible power supplies (UPS). Other applications include battery charging and energy storage systems.

The new TO-247PLUS package achieves double rated current compared to conventional TO-247-3 packages. Due to the removal of the standard TO-247 package mounting holes, the PLUS package has a larger lead frame area, thus accommodating larger IGBT chips. Pin size remains unchanged 75 A 1200 V IGBT is now available. The larger lead frame allows the TO-247PLUS package to have lower thermal resistance, resulting in improved heat dissipation.

For designers who want to reduce switching losses, the TO-247PLUS 4-pin package has additional Kelvin emitter pins that reduce the inductance of the gate-emitter control loop and reduce the total switching loss E (ts) by 20 %the above. The TO-247PLUS 3-pin and 4-pin 1200V IGBTs increase the system power density. In addition, they can reduce the number of parallel power devices, improve system efficiency or improve system cooling.

Supply

The new 1200 V IGBTs in the TO-247PLUS 3-pin and TO-247PLUS 4-pin package are available in volume. The product portfolio includes 40 A, 50 A and 75 A. If you want to learn more information, please go to omoelec.com.

You may interested on: RF/IF and RFID

Industrial Controls, Meters