STMicroelectronics Launched the Latest MDmesh ™ Dk5 Power MOSFETs with Internal Very High Voltage (VHV) Supercode Transistors for Fast Recovery Diode, which helps designers maximize energy efficiency in a variety of power conversion topologies, including zero voltage Switch (ZVS) LLC resonant converter.

As the overrun MOSFET, the new product rated voltage range of 950V to 1050V, switching performance, on-resistance (RDS (ON)) and silicon unit area of the rated current and other technical parameters are better than the planar structure of the ordinary MOSFET transistor. In high-power equipment with power converters, such as high bus voltage for telecom servers or data center servers, industrial welding machines, plasma generators, high-frequency induction heaters and X-ray machines, STMicroelectronics offers new products Personnel can improve the application of energy efficiency, reduce the number of parallel devices, thereby increasing the power density. You may interested on: MCR10EZHF2151 and SN74LV08ADGVR

The internal fast recovery body diode allows new products to enhance the energy efficiency of the zero-voltage switch LLC resonant converter to meet the requirements for wide-voltage input and energy efficiency. Other types of bridge converters and battery charge boost DC / DC converters will also benefit from the low loss and high dynamic performance of new products. Compared to the existing VHF MOSFETs with built-in fast recovery diodes, STMicroelectronics DK5 has the shortest reverse recovery time (trr), the lowest MOSFET gate charge (Qg) and on-resistance RDS (ON) As well as the excellent output input capacitance (Coss, Ciss) in the overgrowth product.

The DK5 series has expanded the range of 800V to 1500V voltage range from the addition of six TO-247, TO-247 long feet, Max247 and ISOTOP power package products. STWA40N95DK5, STY50N105DK5 and STW40N95DK5 have begun mass production.

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